2. An LED and Phototransistor is equivalent to a/an
(1) Thermocouple
(2) FET
(3) Optocoupler
(4) Regulator
3. _______ is an equivalent circuit of a diode in which it is represented as a switch in series with
4. JFET can be operated under
c) Both Enhancement and Depletion mode
d) Active mode
Codes:
(1) a, c
(2) b
(3) a, b, c
(4) c, d
5. Which of the following are TRUE about a Tunnel diode?
a) It uses negative conductance property
b) It operates at high frequency
c) Fermi level of 'P' side becomes higher than 'N' side in forward bias
d) It is a variable capacitance device
(1) a, b
(2) a, b, c
(3) b, c
(4) d only
6. Match the following and choose the correct code:
List-l
-------------
List-II
Codes:
(1) a-iii, b-ii, c - iv, d - i
(2) a-i, b-ii, c - iv, d - iii
(3) a-iv, b-i, c- ii, d - iii
(4) a-ii, b-i, c - iv, d - iii
8. Arrange the following materials according to their resistivity in decreasing order
a) Iron
b) Tungsten
c) Aluminium
d) Copper
Codes:
(1) a, b, c, d
(2) d, c, b, a
(3) a, b, d, c
(4) a, c, b, d
9. Examine carefully Assertion (A) and Reason (R) and choose the correct answer:
Assertion (A): CdTe is a material used in photoconducting mode only for infrared detection
Reason (R): It is very difficult to form a p-n junction using CdTe material
Codes:
(1) Both (A) and (R) are true and (R) is the correct explanation of (A)
(2) Both (A) and (R) are true but (R) is not the correct explanation of (A)
(3) (A) is true but (R) is false
(4) (A) is false but (R) is true
10. Examine carefully Assertion (A) and Reason (R) and choose the correct answer:
Assertion (A): JFET has very high input impedance
Reason (R): JFET provides high degree of isolation between Input and Output circuits
Codes:
(1) Both (A) and (R) are true and (R) is the correct explanation of (A)
(2) Both (A) and (R) are true but (R) is not the correct explanation of (A)
(3) (A) is true but (R) is false
(4) (A) is false but (R) is true
11. Etching is used in semiconductor fabrication to
(1) Create a conductive layer
(2) Remove material selectively from the wafer surface
(3) Grow a thin layer of oxide
(4) Create patterns using a mask
12. Which technique provides high resolution images of surface morphology and topography of thin films?
(1) XRD
(2) EDX
(3) TEM
(4) SEM
13. Which layer of a stick diagram is often indicated using blue colour codes?
(1) Diffusion layer
(2) Metal layer
(3) Polysilicon layer
(4) Substrate layer
14. In the fabrication of NMOS and CMOS transistors, the gate is typically made of _______
a) Aluminium
c) Copper
d) Silver
Codes:
(1) Option (b) & (c) only
(2) Option (c) & (d) only
(3) Option (b) only
(4) Option (a), (b) & (d)
15. What does the edge exclusion design rule specify?
a) Minimum distance between components and chip edges
b) Maximum distance between components and chip edges
c) Optimal component alignment
d) Placement of vias near the chip edges
Codes:
(1) Option (b) only
(2) Option (a) & (d) only
(3) Option (c) & (d) only
(4) Option (a) only
16. Match the following and choose the correct code:
List - I
a) Chemical Vapour Deposition (CVD)
b) Physical Vapour Deposition (PVD)
c) Atomic Layer Deposition (ALD)
d) Spin Coating
------------
List - II
i. Deposition occurs one atomic layer at a time
ii. Material is heated in a vacuum to create vapour
iii. Ions accelerated towards a target material
iv. A liquid solution is dispensed onto a spinning substrate
Codes:
(1) a-iii, b-ii, c - i, d - iv
(2) a-i, b-ii, c - iii, d - iv
(3) a-ii, b-i, c - iv, d - iii
(4) a - i, b - iii, c - ii, d - iv
17. Match the following and choose the correct code:
List-l
a) CMOS
b) nMOS
c) PMOS
d) CCD
----------
List-II
i. Electron are majority carrier
ii. Both electrons and holes are a carrier
iii. It converts the physical signal into an electrical signal via a charge transfer mechanism
iv. N-type substrate is used
Codes:
(1) a-iv, b-iii, c-ii, d- i
(2) a-iii, b-ii, c-iv, с d - i
(3) a-ii, b-i, c - iv, d - iii
(4) a-i, b-ii, c - iv, d - iii
18. Examine carefully Assertion (A) and Reason (R) and choose the correct answer:
Assertion (A): Lithography is a critical step in defining the geometry of components on semiconductor wafers.
Reason (R): Lithography uses masks and photo resist to create patterns that guide subsequent manufacturing steps.
(1) Both (A) and (R) are true but (R) is not the correct explanation of (A)
(2) Both (A) and (R) are true and (R) is the correct explanation of (A)
(3) (A) is true but (R) is not true
(4) (R) is false but (A) is true
19. Examine carefully Assertion (A) and Reason (R) and choose the correct answer:
Assertion (A): VLSI design flow is an algorithm with definite objective. Some of them consists of wire length, minimum area and power optimization.
Reason (R): Analog VLSI circuits are extensively used in applications such as audio and video processing, sensor interfaces.
(1) Both (A) and (R) are true and (R) is the correct reason of (A)
(2) Both (A) and (R) are true but (R) is not the correct reason for (A)
(3) (A) is true but (R) is not true
(4) (A) is not true but (R) is true
20. In VLSI n-MOS process, the thinox mask
(1) Patterns of the ion implantation within the thinox region
(2) Deposited polysilicon all over thinox region
(3) Patterns thinox region to expose silicon where source, drain or gate areas are required
(4) Grows thickox over thinox regions in gate areas.
21. The number of network equations required to describe the voltages and currents in a network having 8 branches and 5 nodes is ______
(1) 6
(2) 4
(3) 7
(4) 5
22. When a unit step voltage is applied at t = 0 to a series RL circuit with zero initial conditions, then
(1) It is possible for the current to be oscillatory
(2) The voltage across the resistor at t = 0 is zero
(3) The energy stored in the inductor in the steady-state is zero
(4) The resistance current eventually falls to zero
23. The ABCD parameter condition for which the two-port network is reciprocal is
(1) AC - BC = 1
(2) AD - BC = 1
(3) AC - BA = 1
(4) AB - BC = 1
24. Superposition theorem is NOT applicable for
(1) Linear network
(2) Time-invariant network
(3) Non-linear network
(4) Linear time invariant network
a) It represents an LC circuit
b) It represents a RLC circuit
c) It has poles lying on the jo axis
d) It has a pole at infinite frequency and a zero at zero frequency
(1) b and d
(2) a and c
(3) a and d
(4) b and c
26. The order in which the I/P signal flows through following sub-circuits of PLL is
a) Low-pass filter
b) Amplifier
c) Phase detector
d) VCO
(1) c, a, b, d
(2) b, a, d, c
(3) c, d, a, b
(4) b, c, a, d
27. For the circuit shown in the figure, List-I represents Y-parameters and List-ll represents corresponding Y-parameter values. Match List-I with List-ll from the following:
(1) a - ii b - i c- iii, d - iv
(2) a - i, b - ii, c - ii, d - iv
(3) a - i b - ii c - iv d - iii
(4) a - iv b-iii, c - ii d - i
(1) ai, b - ii c - iii, d - iv
(2) a - ii b - i c - iii d - iv
(3) a - i b - ii c - iv d - iii
(4) a - ii b - i c - iv d - ii
29. Arrange the following design procedures for analog Chebyshev low-pass filter:
a) Find the value of H(s)
b) Find the value of Sk
c) Determine the value of ∊, μ , a, b
d) Find the order of the filter
(1) d c b a
(2) a b c d
(3) b c a d
(4) c d b a
30. Examine carefully Assertion (A) and Reason (R) and choose the correct answer:
Assertion (A): Laplace transform is preferred for solving networks involving higher order differential equations
Reason (R):
The classical method for solving differential equations of higher order is quite cumbersome
(1) Both (A) and (R) are true and (R) is the correct explanation of (A)
(2) Both (A) and (R) are true, but (R) is not the correct explanation of (A)
(3) (A) is true but (R) is false
(4) (A) is false but (R) is true
31. The applied input A.C power to a half wave rectifier is 100 watts. The D.C output power obtained is 40 watts. Then the rectification efficiency is ______
(1) 42.3%
(2) 41.25%
(3) 40.00%
(4) 80.15%
32. The Schmitt trigger can be used in which of the following?
i) Square wave generator
ii) Comparator
iii) Astable multivibrator
iv) Triangular wave generator
Codes:
(1) (i), (ii) & (iii)
(2) (ii), (iii) & (iv)
(3) (i), (iii) & (iv)
(4) (i) & (iv)
33. Match the following and choose the correct code:
List-l
a) BJT
b) Slew rate
c) Phase shift oscillator
d) Differential amplifier
List-II
i. Rate of change of output voltage per unit time
ii. Current controlled device
iii. R and C are the frequency determining elements
iv. Used to amplify the difference between two input voltage
Codes:
(1) a - i b - ii c - iii d - iv
(2) a - i b - iv c - iii d - ii
(3) a - ii, b - i, c - iii, d - iv
(4) a-iii, b - ii c - iv d - i
Official Answer Key ...
